CYPRESS SEMICONDUCTOR

Cypress Parallel F-RAM Non-Volatile Memory

Cypress Parallel F-RAM Non-Volatile Memory

Cypress' Parallel F-RAM Non-Volatile Memory operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. These F-RAMs read and write similar to a standard SRAM. A ferroelectric random access memory or F-RAM is non-volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. These features make these devices ideal for non-volatile memory applications requiring frequent or rapid writes.

Features

  • High-endurance 100 trillion (1014) read/writes

  • 151-year data retention

  • NoDelay™ writes

  • Advanced high-reliability ferroelectric process

  • Superior to battery-backed SRAM modules

  • No battery concerns


  • Monolithic reliability

  • True surface mount solution, no rework steps

  • Superior for moisture, shock, and vibration

  • Low power consumption

  • Industrial temperature: -40°C to +85°C

  • Restriction of hazardous substances (RoHS) compliant

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